esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 1/10 fast ultra high-psrr, low-noise, 300ma cmos linear regulator general description the emp8737 features ultra-high power supply rejection ratio, low output voltage noise, low dropout voltage, low quiescent current and fast transient response. it guarantees delivery of 300ma output current for v in =2.2v ~ 5.5v and supports preset output voltages ranging from 0.8v to 4.5v with 0.05v increment. it also guarantees delivery of 100ma output current for v in range lower from 1.75v ~ 2.1v. based on its low quiescent current consumption and its less than 1 a shutdown mode of logical operation, the emp8737 is ideal for battery-powered applications. the high power supply rejection ratio of the emp8737 holds well for low input voltages typically encountered in battery-operated systems. the regulator is stable with small ceramic capacitive loads (1f typical). the emp8737 is available in miniature sot-23-5 package. features ? 2.2v to 5.5v input range for i out 300ma operation ? 1.75v to 2.1v input range for i out 100ma operation ? 62db typical psrr at 1khz ? 110v rms output voltage noise (10hz to 100khz) ? 290mv typical dropout at 300ma ? 57a typical quiescent current ? less than 1 a typical shutdown mode ? fast line and load transient response ? auto-discharge during chip disable ? 80s typical turn-on time ? stable with small ceramic output capacitors ? over temperature and over current protection ? 2% output voltage tolerance applications ? wireless handsets ? pcmcia cards ? dsp core power ? hand-held instruments ? battery-powered systems ? portable information appliances typical application * use 2.2 f for v out < 1.2v
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 2/10 connection diagram order information sot-23-5(top view) emp8737-xxvf05grr xx output voltage vf05 sot-23-5 package nrr rohs & halogen free commercial grade temperature rating: -40 to 85c package in tape & reel l pin functions name sot-23-5 function vin 1 supply voltage input . require a minimum input capacitor of close to 1f to ensure stability and sufficient decoupling from the ground pin. gnd 2 ground pin . en 3 enable input. enable the regulator by pulling the en pin high. to keep the regulator on during normal operation, connect the en pin to vin. the en pin must not exceed vin + 0.5v under all operating conditions. nc 4 no connection vout 5 output voltage feedback . order, mark & packing information marking vout product id packing 1.2 EMP8737-12VF05GRR 3k units tape & reel
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 3/10 absolute maximum ratings (notes 1, 2) vin, vout, ven -0.3v to 6.5v storage temperature range -65c to160c junction temperature (t j ) 150c lead temperature (10 sec.) 260c esd rating human body model 2kv mm 200v thermal resistance ( ja ) sot-23-5 250c/w operating ratings (note 1, 2) temperature range -40c to 85c supply voltage 2.2v to 5.5v electrical characteristics unless otherwise specified, all limits guaranteed for v in = v out +1v (note 3), v en =v in , c in = c out = 2.2f, t a = 25c. boldface & underline limits apply for the operating temperature extremes: -40c and 85c. symbol parameter conditions min typ max units v in input voltage i out = 300ma (max.) 2.2 5.5 v v out output voltage 0.8 4.5 v -2 +2 v otl output voltage tolerance i out = 10ma (note 3) -3 +3 % of v out (nom) i out maximum output current v in = 2.2v ~ 5.5v 300 ma i limit output current limit 300 450 ma i out = 0ma 57 i out = 50ma 63 i out = 150ma 88 supply current i out = 300ma 130 i q shutdown supply current v out = 0v, en = gnd 0.001 1 a i out = 100ma 90 v do dropout voltage (note4) i out = 300ma 290 mv line regulation i out = 1ma, (v out + 1v) v in 5.5v (note 3) -0.1 0.01 0.1 %/v v out load regulation 1ma i out 300ma 0.0008 %/ma e n output voltage noise v out =2.5v, i out = 10ma, 10hz f 100khz 110 v rms thermal shutdown temperature 165 t sd thermal shutdown hysteresis 35 v ih , (v out + 1v) v in 5.5v (note 3) 1.2 v en en input threshold v il , (v out + 1v) v in 5.5v (note 3) 0.4 v i en en input bias current en = gnd or v in 0.1 100 na t on turn-on time v out at 95% of final value 80 s t off turn-off time i out =0ma (note 5) 2.4 ms
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 4/10 electrical characteristics (cont.) unless otherwise specified, all limits guaranteed for v en =v in , c in = c out = 2.2f, t a = 25c. symbol parameter conditions min typ max units v in input voltage i out = 100ma (max.) 1.75 2.1 v v otl output voltage tolerance 1ma i out 100ma, 1.75v v in 2.1v -2 +2 % of v out (nom) i out maximum output current v in = 1.75v ~ 2.1v 50 100 ma note 1: absolute maximum ratings indicate limits beyond which damage may occur. electrical specifications do not apply when operating the device outside of its rated operating conditions. note 2: all voltages are with respect to the potential at the ground pin. note 3: condition does not apply to input voltages below 2.2v since this is the minimum input operating voltage. note 4: dropout voltage is measured by reducing v in until v out drops 100mv from its nominal value at v in -v out = 1v. dropout voltage does not apply to the regulator versions with v out less than 2.2v. note 5: turn-off time is time measured between the enable input just decreasing below v il and the output voltage just decreasing to 10% of its nominal value. note 6: maximum power dissipation for the device is ca lculated using the following equations: ja a t - j(max) t d p = where t j(max) is the maximum junction temperature, t a is the ambient temperature, and ja is the junction-to-ambient thermal resistance. e.g. for the sot-23-5 package ja = 250c/w, t j(max) = 150c and using t a = 25c, the maximum power dissipation is found to be 500mw. the derating factor (-1/ ja ) = -4mw/c, thus below 25c the power dissipation figure can be increase d by 4mw per degree, and similarity decreased by this factor for temperatures above 25c. functional block diagram
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 5/10 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, v en =v in , c in = c out = 2.2f, t a = 25c. psrr vs. frequency psrr (db) psrr (db) psrr vs. frequency psrr (db) psrr vs. frequency psrr (db) psrr vs. frequency frequency (hz) frequency (hz) frequency (hz) frequency (hz) dro p out volta g e vs. load current load current (ma) dropout voltage (mv) ground current ( a) ground current vs. load current load current (ma)
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 6/10 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, v en =v in , c in = c out = 2.2f, t a = 25c. (continued) line transient ground current ( a) ground current vs. vin vin (v) load transient load transient v out =3.3v, no load vin (v), tr=tf=4us v out (10mv/div) v out =2.5v, i out =10ma 200 s/div 200 s/div 200 s/div 4.5 3.5 v out 20mv/div 50ma/div v out =2.5v 50mv/div 50ma/div i out =50ma~100ma v out v out =2.5v i out =10ma~100ma enable response 20 s/div enable response i out =0ma i out =0ma v en (1v/div) v out (1v/div) vin= 3 . 5 v , v out =2. 5 v , i out = 0 ma 20 s/div v en (1v/div) v out (1v/div) vin=3.5v , v out =2.5v , i out =300ma
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 7/10 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, v en =v in , c in = c out = 2.2f, t a = 25c. (continued) enable response 40 s/div v en (1v/div) v out (0.5v/div) vin=2.2v , v out =1.2v , i out =0ma enable response 40 s/div v en (1v/div) v out (0.5v/div) vin=2.2v , v out =1.2v , i out =300ma disable response 2ms/div v en (1v/div) v out (1v/div) vin= 3 . 5 v , v out =2. 5 v , i out = 0 ma disable response 2ms/div v en (1v/div) v out (0.5v/div) vin=2.2v , v out =1.2v , i out = 0 ma power derating (sot-25) power consumption (mw) surface temperature ( o c)
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 8/10 sot-23-5 o 2 symbpls min. nom. max. a 1.05 1.20 1.35 a1 0.05 0.10 0.15 a2 1.00 1.10 1.20 b 0.30 0.50 c 0.08 0.20 d 2.80 2.90 3.00 e 2.60 2.80 3.00 e1 1.50 1.60 1.70 e 0.95 bsc e1 1.90 bsc l 0.30 0.45 0.55 l1 0.60 ref l2 0.25 ref 0 5 10 2 6 8 10 unit: mm
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 9/10 revision history revision date description 1.0 2011.05.28 original version 1.1 2011.05.28 en pin must not exceed vi n + 0.5v under all operating conditions 1.2 2011.07.04 modify ou tput voltage tolerance
esmt/emp emp8737 elite semiconductor memory technology inc./elite micropower inc . publication date : jul. 2011 revision : 1.2 10/10 important notice all rights reserved. no part of this document may be reproduced or duplicated in any form or by any means without th e prior permission of esmt. the contents contained in this document are believed to be accurate at the time of publication. esmt as sumes no responsibility for any error in this document, and reserves th e right to change the products or specification in this document without notice. the information contained herein is presented only as a guide or examples for the application of ou r products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted under any patents, copyrights or other intelle ctual property rights of esmt or others. any semiconductor devices may have inherently a certain rate of failure. to minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly aff ect human lives or cause physical injury or property damage. if prod ucts described here are to be used for such kinds of application, pu rchaser must do its own quality assurance testing appropriate to such applications.
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